Micron Technology DRAM SDRAM-DDR3L, Part #: MT53D1024M32D4DT-046 WT:D TR | Dynamic random access memory | DEX Analog IGBT 1200V 300A

IGBT 1200V 300A

Quadro 410 is tested

EEPROM (KB): 0

ï‚„ Voltage: 887

RAM Size: 64K x 8

Micron Technology DRAM SDRAM-DDR3L, Part #: MT53D1024M32D4DT-046 WT:D TR | Dynamic random access memory | DEX Analog IGBT 1200V 300AMicron Technology DRAM SDRAMMobile , Part #: MT53D1024M32D4DT 046 WT: D TR features: Ultra low voltage core and I O power supplies VDD1 = 1. 701. 95V; 1. 80V nominal VDD2 = 1. 061. 17V; 1. 10V nominal VDDQ = 1. 061. 17V; 1. 10V nominal or Low VDDQ = 0. 570. 65V; 0. 60V nominal Frequency range 213310 MHz (data rate range: 426620 Mbps pin) 16n prefetch DDR architecture 8 internal banks per channel for concurrent operation Single data rate CMD ADR entry